A simple, low resistance contact system for shallow junction p{sup +}nn{sup +} InP solar cells that preserves emitter integrity during sintering
Conference
·
OSTI ID:191201
- Essential Research, Inc., Cleveland, OH (United States)
- National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center
The authors have discovered what appears to be a unique contact system for use on p-type InP. The new contacts provide low resistance contact to p-InP without the violent metallurgical intermixing that would normally take place between the emitter material and the contact metallization during the contact sintering process. With this new contact system it is possible, for the first time, to make low resistance ohmic contact directly to a shallow junction p/n InP solar cell without destroying the cell in the process. The use of this contact system eliminates the need for an InGaAs cap layer under the metallization, greatly facilitating the use of low cost substrates.
- OSTI ID:
- 191201
- Report Number(s):
- CONF-941203--; ISBN 0-7803-1459-X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Non-destructive, ultra-low resistance, thermally stable contacts for use on shallow junction InP solar cells
Sinterless contacts to shallow junction InP solar cells
Transparent ohmic contacts to epitaxial InP cells
Conference
·
Sat May 01 00:00:00 EDT 1993
·
OSTI ID:5978580
Sinterless contacts to shallow junction InP solar cells
Conference
·
Tue Dec 31 23:00:00 EST 1991
·
OSTI ID:7117375
Transparent ohmic contacts to epitaxial InP cells
Conference
·
Fri Dec 30 23:00:00 EST 1994
·
OSTI ID:191154