Nonalloyed Ti/Al Ohmic contacts to {ital n}-type GaN using high-temperature premetallization anneal
- Center for High Technology Materials, University of New Mexico, EECE Building, Room 125, Albuquerque, New Mexico 87131 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 (United States)
On Si-implanted {ital n}-type GaN, a nonalloyed Ti/Al metallization has been found to form an Ohmic contact that has a specific contact resistance as low as 1.0{times}10{sup {minus}5} {Omega}cm{sup 2}. The Ohmic character is believed to be caused by the 1120{degree}C implant activation anneal which generates nitrogen vacancies that leave the surface heavily {ital n} type. This theory is indirectly confirmed on unimplanted {ital n}-type GaN by comparing the {ital r}{sub {ital c}} of nonalloyed Ti/Al on unannealed GaN with that of nonalloyed Ti/Al on 1120{degree}C annealed GaN. The former has rectifying electrical characteristics, while the latter forms an Ohmic contact with an {ital r}{sub {ital c}}=1.3{times}10{sup {minus}3} {Omega}cm{sup 2}. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 388149
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 69; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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