Multiband GaNAsP Quaternary Alloys

Journal Article · Thu Dec 08 04:00:00 EST 2005 · Applied Physics Letters

OSTI ID:903038

Yu, K M; Walukiewicz, W; Ager, III, J W; Bour, D; Farshchi, R; Dubon, O D; Li, S X; Sharp, I D; Haller, E E

We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

• Research Organization: Ernest Orlando LawrenceBerkeley NationalLaboratory, Berkeley, CA (US)
• Sponsoring Organization: USDOE Director, Office of Science. Office of Basic EnergySciences. Materials Science and Engineering Division
• DOE Contract Number: AC02-05CH11231
• OSTI ID: 903038
• Report Number(s): LBNL--59194
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 88; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOYS
ANNEALING
ION IMPLANTATION
LASERS
MELTING
NITROGEN
SOLAR CELLS
VALENCE