Effect of nitrogen on the band structure of GaInNAs alloys

Journal Article · Sun Aug 01 04:00:00 EDT 1999 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.371148· OSTI ID:357266

Shan, W; Walukiewicz, W; Ager, III, J W ^[1]; Haller, E E ^[2]; Geisz, J F; Friedman, D J; Olson, J M; Kurtz, S R ^[3]

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1. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
2. Materials Sciences Division, Lawrence Berkeley National Laboratory, and Department of Materials Sciences and Mineral Engineering, University of California, Berkeley, California 94720 (United States)
3. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

We show that incorporation of nitrogen in Ga{sub 1{minus}x}In{sub x}As to form Ga{sub 1{minus}x}In{sub x}N{sub y}As{sub 1{minus}y} alloys leads to a splitting of the conduction band into two nonparabolic subbands. The splitting can be described in terms of an anticrossing interaction between a narrow band of localized nitrogen states and the extended conduction-band states of the semiconductor matrix. The downward shift of the lower subband edge accounts for the N-induced reduction of the fundamental band-gap energy. An analysis of the relationship between the subband splitting and the band-gap reduction demonstrates that the energetic location of the valence band is nearly independent of the N content in Ga{sub 1{minus}x}In{sub x}N{sub y}As{sub 1{minus}y} alloys. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 357266
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 86; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DOPING
ELECTRONIC STRUCTURE
ENERGY GAP
GALLIUM ARSENIDES
IMPURITIES
INDIUM ARSENIDES
INDIUM COMPOUNDS
NITROGEN ADDITIONS