Nitrogen-Induced Modification of the Electronic Structure of Group III-N-V Alloys: Preprint

Conference · Thu Apr 01 00:00:00 EST 1999

OSTI ID:789281

Walukiewicz, W; Shan, W; Ager, III, J W; Chamberlin, D R; Haller, E E ^[1]; Geisz, J F; Friedman, D J; Olson, J M; Kurtz, S R ^[2]

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1. Lawrence Berkeley National Laboratory
2. National Renewable Energy Laboratory

Incorporation of nitrogen in conventional III-V compound semiconductors to form III-N-V alloys leads to a splitting of the conduction band into two nonparabolic sub-bands. The splitting can be described in terms of an anticrossing interaction between a narrow band of localized nitrogen states and the extended conduction-band states of the semiconductor matrix. The downward shift of the lower sub-band edge is responsible for the N-induced reduction of the fundamental band-gap energy. The modification of the conduction-band structure profoundly affects the optical and electrical properties of the III-N-V alloys.

• Research Organization: National Renewable Energy Lab., Golden, CO (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC36-99GO10337
• OSTI ID: 789281
• Report Number(s): NREL/CP-520-29583
• Resource Type: Conference paper/presentation
• Conference Information: Electrochemical Society International Symposium, Seattle, WA (US), 05/02/1999--05/06/1999
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
ALLOYS
BAND-GAP ENERGY
ELECTRICAL PROPERTIES
ELECTRONIC STRUCTURE
MODIFICATIONS
NITROGEN
SEMICONDUCTORS