Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys

Journal Article · Mon May 15 04:00:00 EDT 2000 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.61.R13337· OSTI ID:20216566

Yu, K M ^[1]; Walukiewicz, W ^[1]; Shan, W ^[1]; Ager, III, J W ^[1]; Wu, J ^[1]; Haller, E E ^[1]; Geisz, J F ^[2]; Friedman, D J ^[2]; Olson, J M ^[2]

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1. Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
2. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

The maximum free-electron concentration is observed to increase dramatically with the nitrogen content x in heavily Se-doped Ga{sub 1-3x}In{sub 3x}N{sub x}As{sub 1-x} (0{<=}x<0.033) films. For example, an electron concentration of 7x10{sup 19} cm{sup -3} was observed at x=0.033; a value more than 20 times larger than that observed in GaAs films grown under similar conditions. It is shown that the increase is caused by a combination of two effects: (1) a downward shift of the conduction band and (2) an increase of the electron effective mass caused by flattening of the conduction-band minimum. Both these effects are due to modifications to the conduction-band structure caused by an anticrossing interaction of a localized N state and the conduction band of the III-V host. (c) 2000 The American Physical Society.

• OSTI ID: 20216566
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 20 Vol. 61; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHARGE CARRIERS
DOPED MATERIALS
ELECTRONS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM NITRIDES
INDIUM ARSENIDES
SELENIUM ADDITIONS