Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys
- Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
- National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
The maximum free-electron concentration is observed to increase dramatically with the nitrogen content x in heavily Se-doped Ga{sub 1-3x}In{sub 3x}N{sub x}As{sub 1-x} (0{<=}x<0.033) films. For example, an electron concentration of 7x10{sup 19} cm{sup -3} was observed at x=0.033; a value more than 20 times larger than that observed in GaAs films grown under similar conditions. It is shown that the increase is caused by a combination of two effects: (1) a downward shift of the conduction band and (2) an increase of the electron effective mass caused by flattening of the conduction-band minimum. Both these effects are due to modifications to the conduction-band structure caused by an anticrossing interaction of a localized N state and the conduction band of the III-V host. (c) 2000 The American Physical Society.
- OSTI ID:
- 20216566
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 61, Issue 20; Other Information: PBD: 15 May 2000; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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