Large, nitrogen-induced increase of the electron effective mass in In{sub y}Ga{sub 1-y}N{sub x}As{sub 1-x}
- UNIPRESS, Polish Academy of Sciences, ul. Sokolowska 29, 01-142 Warsaw, (Poland)
- Materials Sciences Division, Lawrence Berkeley National Laboratory and Department of Materials Sciences and Mineral Engineering, University of California, Berkeley, California 94720 (United States)
A dramatic increase of the conduction band electron mass in a nitrogen-containing III-V alloy is reported. The mass is found to be strongly dependent on the nitrogen content and the electron concentration with a value as large as 0.4m{sub 0} in In{sub 0.08}Ga{sub 0.92}As{sub 0.967}N{sub 0.033} with 6x10{sup 19} cm{sup -3} free electrons. This mass is more than five times larger than the electron effective mass in GaAs and comparable to typical heavy hole masses in III-V compounds. The results provide a critical test and fully confirm the predictions of the recently proposed band anticrossing model of the electronic structure of the III-N-V alloys. (c) 2000 American Institute of Physics.
- OSTI ID:
- 20216000
- Journal Information:
- Applied Physics Letters, Vol. 76, Issue 17; Other Information: PBD: 24 Apr 2000; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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