Nitrogen composition dependence of electron effective mass in GaAs_1-xN_x

Journal Article · Fri Sep 03 04:00:00 EDT 2010 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.82.125203· OSTI ID:1064867

Dannecker, T. ^[1]; Jin, Y. ^[2]; Cheng, H. ^[2]; Gorman, C. F. ^[2]; Buckeridge, J. ^[3]; Uher, Ctirad ^[2]; Fahy, S. ^[1]; Kurdak, C. ^[2]; Goldman, Rachel S. ^[2]

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1. Univ. College Cork (Ireland); Univ. of Michigan, Ann Arbor, MI (United States)
2. Univ. of Michigan, Ann Arbor, MI (United States)
3. Univ. College Cork (Ireland)

We have investigated the N composition, x , and temperature, T , dependence of the electron effective mass, m^*, of GaAs_1-x N_x films with sufficiently low carrier concentration that carriers are expected to be confined to near the bottom of the conduction-band edge (CBE). Using Seebeck and Hall measurements, in conjunction with assumptions of parabolic bands and Fermi-Dirac statistics, we find a nonmonotonic dependence of m^* on x and an increasing T dependence of m^* with x . These trends are not predicted by the two-state band anticrossing model but instead are consistent with the predictions of the linear combination of resonant nitrogen states model, which takes into account several N-related states and their interaction with the GaAs CBE.

• Research Organization: Energy Frontier Research Centers (EFRC); Center for Solar and Thermal Energy Conversion (CSTEC)
• Sponsoring Organization: USDOE SC Office of Basic Energy Sciences (SC-22)
• DOE Contract Number: SC0000957
• OSTI ID: 1064867
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Vol. 82; ISSN 1098-0121
• Publisher: American Physical Society (APS)
• Country of Publication: United States
• Language: English

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