Nitrogen composition dependence of electron effective mass in GaAs1-xNx
- Univ. College Cork (Ireland); Univ. of Michigan, Ann Arbor, MI (United States)
- Univ. of Michigan, Ann Arbor, MI (United States)
- Univ. College Cork (Ireland)
We have investigated the N composition, x , and temperature, T , dependence of the electron effective mass, m*, of GaAs1-x Nx films with sufficiently low carrier concentration that carriers are expected to be confined to near the bottom of the conduction-band edge (CBE). Using Seebeck and Hall measurements, in conjunction with assumptions of parabolic bands and Fermi-Dirac statistics, we find a nonmonotonic dependence of m* on x and an increasing T dependence of m* with x . These trends are not predicted by the two-state band anticrossing model but instead are consistent with the predictions of the linear combination of resonant nitrogen states model, which takes into account several N-related states and their interaction with the GaAs CBE.
- Research Organization:
- Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- DOE Contract Number:
- SC0000957
- OSTI ID:
- 1064867
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 82; Related Information: CSTEC partners with University of Michigan (lead); Kent State University; ISSN 1098-0121
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
Similar Records
Majority Carrier Properties of Single Crystal Cu 2− x ZnSnSe 4 with Varying Copper Composition
Phase stability and chemical composition dependence of the thermoelectric properties of the type-I clathrate Ba{sub 8}Al{sub x}Si{sub 46-x} (8{<=}x{<=}15)