Effect of nitrogen on the electronic band structure of group III-N-V alloys

Journal Article · Tue Aug 15 04:00:00 EDT 2000 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.62.4211· OSTI ID:20217356

Shan, W ^[1]; Walukiewicz, W ^[1]; Yu, K M ^[1]; Ager, III, J W ^[1]; Haller, E E ^[1]; Geisz, J F ^[2]; Friedman, D J ^[2]; Olson, J M ^[2]; Kurtz, Sarah R ^[2]; Nauka, C ^[3]

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1. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
2. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
3. Hewlett Packard Laboratories, Palo Alto, California 94304 (United States)

We have studied optical transitions at the {gamma} and L points of the Brillouin zone of GaN{sub x}As{sub 1-x} and Al{sub y}Ga{sub 1-y}N{sub x}As{sub 1-x} alloys using photomodulation spectroscopy. For GaN{sub x}As{sub 1-x} with N contents between 0% and 2%, the N-induced shift of the conduction-band L minima is found to be only a fraction of the conduction-band edge shift at the {gamma} point. The measurements of Al{sub y}Ga{sub 1-y}N{sub x}As{sub 1-x} further show that there is no correlation between the location of the X conduction-band minima and the observed E{sub +} and E{sub -} transitions. The results demonstrate that the N-induced interactions between extended {gamma}, L, and X conduction-band states do not play a significant role in modification of the conduction-band structure of III-N-V alloys. The N-induced change of the conduction-band structure is predominantly influenced by the anticrossing interaction between the extended states of the {gamma} conduction band and the localized states of nitrogen. (c) 2000 The American Physical Society.

• OSTI ID: 20217356
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 7 Vol. 62; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
BRILLOUIN ZONES
ELECTRONIC STRUCTURE
ENERGY-LEVEL TRANSITIONS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
NITROGEN ADDITIONS
OPTICAL PROPERTIES