Band Anticrossing in GaInNAs Alloys

Journal Article · Mon Feb 01 04:00:00 EST 1999 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.82.1221· OSTI ID:307280

Shan, W; Walukiewicz, W; Ager, III, J W ^[1]; Haller, E E ^[2]; Geisz, J F; Friedman, D J; Olson, J M; Kurtz, S R ^[3]

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1. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
2. Materials Sciences Division, Lawrence Berkeley National Laboratory, and Department of Materials Sciences and Mineral Engineering, University of California, Berkeley, California 94720 (United States)
3. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

We present evidence for a strong interaction between the conduction band and a narrow resonant band formed by nitrogen states in Ga{sub 1{minus}x}In {sub x}N{sub y}As{sub 1{minus}y} alloys. The interaction leads to a splitting of the conduction band into two subbands and a reduction of the fundamental band gap. An anticrossing of the extended states of the conduction band of the Ga{sub 1{minus}x}In {sub x}As matrix and the localized nitrogen resonant states is used to model the interaction. Optical transitions associated with the energy minima of the two subbands and the characteristic anticrossing behavior of the transitions under applied hydrostatic pressure have been unambiguously observed using photomodulation spectroscopy. The experimental results are in excellent quantitative agreement with the model. {copyright} {ital 1999} {ital The American Physical Society}

• Research Organization: Lawrence Berkeley National Laboratory
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 307280
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 6 Vol. 82; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTIVITY
ELECTRONIC STRUCTURE
ENERGY GAP
ENERGY-LEVEL TRANSITIONS
GALLIUM ARSENIDES
INDIUM ALLOYS
INDIUM ARSENIDES
NITROGEN ADDITIONS
OPTICAL PROPERTIES
PRESSURE DEPENDENCE