Nitrogen-related intermediate band in P-rich GaNxPyAs1-x-y alloys

Zelazna, K.; Gladysiewicz, M.; Polak, M. P.; Almosni, S.; Létoublon, A.; Cornet, C.; Durand, O.; Walukiewicz, W.; Kudrawiec, R.

doi:10.1038/s41598-017-15933-1

Title: Nitrogen-related intermediate band in P-rich GaN_xP_yAs_1-x-yalloys

Journal Article · Thu Nov 16 00:00:00 EST 2017 · Scientific Reports

DOI:https://doi.org/10.1038/s41598-017-15933-1· OSTI ID:1419449

Zelazna, K. ^[1]; Gladysiewicz, M. ^[1];

^[1]; Almosni, S. ^[2]; Létoublon, A. ^[2]; Cornet, C. ^[2]; Durand, O. ^[2]; Walukiewicz, W. ^[3]; Kudrawiec, R. ^[1]

Wroclaw Univ. of Science and Technology, Wroclaw (Poland). Faculty of Fundamental Problems of Technology
Univ. of Rennes, Rennes(France). FOTON Lab.
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division

The electronic band structure of phosphorus-rich GaN_xP_yAs_1-x-y alloys (x ~ 0.025 and y ≥ 0.6) is studied experimentally using optical absorption, photomodulated transmission, contactless electroreflectance, and photoluminescence. Here, it is shown that incorporation of a few percent of N atoms has a drastic effect on the electronic structure of the alloys. The change of the electronic band structure is very well described by the band anticrossing (BAC) model in which localized nitrogen states interact with the extended states of the conduction band of GaAsP host. The BAC interaction results in the formation of a narrow intermediate band (E_- band in BAC model) with the minimum at the Γ point of the Brillouin zone resulting in a change of the nature of the fundamental band gap from indirect to direct. The splitting of the conduction band by the BAC interaction is further confirmed by a direct observation of the optical transitions to the E₊ band using contactless electroreflectance spectroscopy.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Centre Poland

Grant/Contract Number:: AC02-05CH11231; DI2013006143

OSTI ID:: 1419449

Journal Information:: Scientific Reports, Vol. 7, Issue 1; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 14 works

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Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, and localization of states Polak, M. P.; Kudrawiec, R.; Rubel, O. Journal of Applied Physics, Vol. 126, Issue 17 https://doi.org/10.1063/1.5097977	journal	November 2019
Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, localization of states Polak, Maciej P.; Kudrawiec, Robert; Rubel, Oleg arXiv https://doi.org/10.48550/arxiv.1904.00159	text	January 2019

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