Nitrogen-related intermediate band in P-rich GaNxPyAs1-x-y alloys

Zelazna, K.; Gladysiewicz, M.; Polak, M. P.; Almosni, S.; Létoublon, A.; Cornet, C.; Durand, O.; Walukiewicz, W.; Kudrawiec, R.

doi:10.1038/s41598-017-15933-1

Nitrogen-related intermediate band in P-rich GaN_xP_yAs_1-x-yalloys

Journal Article · Thu Nov 16 00:00:00 EST 2017 · Scientific Reports

DOI:https://doi.org/10.1038/s41598-017-15933-1· OSTI ID:1419449

Zelazna, K. ^[1]; Gladysiewicz, M. ^[1]; ^[1]; Almosni, S. ^[2]; Létoublon, A. ^[2]; Cornet, C. ^[2]; Durand, O. ^[2]; Walukiewicz, W. ^[3]; Kudrawiec, R. ^[1]

Wroclaw Univ. of Science and Technology, Wroclaw (Poland). Faculty of Fundamental Problems of Technology
Univ. of Rennes, Rennes(France). FOTON Lab.
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division

The electronic band structure of phosphorus-rich GaN_xP_yAs_1-x-y alloys (x ~ 0.025 and y ≥ 0.6) is studied experimentally using optical absorption, photomodulated transmission, contactless electroreflectance, and photoluminescence. Here, it is shown that incorporation of a few percent of N atoms has a drastic effect on the electronic structure of the alloys. The change of the electronic band structure is very well described by the band anticrossing (BAC) model in which localized nitrogen states interact with the extended states of the conduction band of GaAsP host. The BAC interaction results in the formation of a narrow intermediate band (E_- band in BAC model) with the minimum at the Γ point of the Brillouin zone resulting in a change of the nature of the fundamental band gap from indirect to direct. The splitting of the conduction band by the BAC interaction is further confirmed by a direct observation of the optical transitions to the E₊ band using contactless electroreflectance spectroscopy.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: National Science Centre Poland; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1419449

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 7; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

References (45)

The Intermediate Band Solar Cell: Progress Toward the Realization of an Attractive Concept Luque, Antonio; MartÃ, Antonio Advanced Materials, Vol. 22, Issue 2 https://doi.org/10.1002/adma.200902388	journal	January 2010
Contactless electroreflectance spectroscopy of ZnO/ZnMgO quantum wells: Optical transitions and Fabry-Perot features: Contactless electroreflectance spectroscopy of ZnO/ZnMgO quantum wells Wełna, M.; Kudrawiec, R.; Misiewicz, J. physica status solidi (a), Vol. 212, Issue 4 https://doi.org/10.1002/pssa.201431564	journal	January 2015
Third-derivative modulation spectroscopy with low-field electroreflectance Aspnes, D. E. Surface Science, Vol. 37 https://doi.org/10.1016/0039-6028(73)90337-3	journal	June 1973
Nitrogen–phosphorus competition in the molecular beam epitaxy of GaPN Kuyyalil, J.; Nguyen Thanh, T.; Quinci, T. Journal of Crystal Growth, Vol. 377 https://doi.org/10.1016/j.jcrysgro.2013.04.052	journal	August 2013
Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster Quinci, T.; Kuyyalil, J.; Thanh, T. Nguyen Journal of Crystal Growth, Vol. 380 https://doi.org/10.1016/j.jcrysgro.2013.05.022	journal	October 2013
Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system Kunert, B.; Volz, K.; Nemeth, I. Journal of Luminescence, Vol. 121, Issue 2 https://doi.org/10.1016/j.jlumin.2006.08.074	journal	December 2006
Intermediate bands versus levels in non-radiative recombination Luque, Antonio; Martí, Antonio; Antolín, Elisa Physica B: Condensed Matter, Vol. 382, Issue 1-2 https://doi.org/10.1016/j.physb.2006.03.006	journal	June 2006
Improving the characteristics of intermediate-band solar cell devices using a vertically aligned InAs/GaAsSb quantum dot structure Liu, Wei-Sheng; Wu, Hong-Ming; Tsao, Fu-Hsiang Solar Energy Materials and Solar Cells, Vol. 105 https://doi.org/10.1016/j.solmat.2012.06.023	journal	October 2012
Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells Ilahi, S.; Almosni, S.; Chouchane, F. Solar Energy Materials and Solar Cells, Vol. 141 https://doi.org/10.1016/j.solmat.2015.06.003	journal	October 2015
Evidence for Fermi level shift in GaInAs/GaAs quantum wells upon nitrogen incorporation Kudrawiec, R.; Misiewicz, J. Solid State Communications, Vol. 150, Issue 3-4 https://doi.org/10.1016/j.ssc.2009.10.043	journal	January 2010
Photoluminescence and photoluminescence-excitation spectroscopy of GaPAsN/GaP lattice-matched multiple quantum well structures Biwa, Goshi; Yaguchi, Hiroyuki; Onabe, Kentaro Journal of Crystal Growth, Vol. 195, Issue 1-4 https://doi.org/10.1016/s0022-0248(98)00734-9	journal	December 1998
Intermediate-band dynamics of quantum dots solar cell in concentrator photovoltaic modules Sogabe, Tomah; Shoji, Yasushi; Ohba, Mitsuyoshi Scientific Reports, Vol. 4, Issue 1 https://doi.org/10.1038/srep04792	journal	April 2014
Pressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions Dybała, F.; Polak, M. P.; Kopaczek, J. Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep26663	journal	May 2016
Effects of nitrogen on the band structure of GaNxP1−x alloys Xin, H. P.; Tu, C. W.; Zhang, Yong Applied Physics Letters, Vol. 76, Issue 10 https://doi.org/10.1063/1.126005	journal	March 2000
Interference effects in electromodulation spectroscopy applied to GaAs-based structures: A comparison of photoreflectance and contactless electroreflectance Kudrawiec, R.; Sitarek, P.; Misiewicz, J. Applied Physics Letters, Vol. 86, Issue 9 https://doi.org/10.1063/1.1873052	journal	February 2005
Direct-band-gap Ga(NAsP)-material system pseudomorphically grown on GaP substrate Kunert, B.; Volz, K.; Koch, J. Applied Physics Letters, Vol. 88, Issue 18 https://doi.org/10.1063/1.2200758	journal	May 2006
Franz–Keldysh oscillations in modulation spectroscopy Shen, H.; Dutta, M. Journal of Applied Physics, Vol. 78, Issue 4 https://doi.org/10.1063/1.360131	journal	August 1995
Room temperature operation of GaAsP(N)/GaP(N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen Robert, C.; Bondi, A.; Thanh, T. Nguyen Applied Physics Letters, Vol. 98, Issue 25 https://doi.org/10.1063/1.3601857	journal	June 2011
Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate Liebich, S.; Zimprich, M.; Beyer, A. Applied Physics Letters, Vol. 99, Issue 7 https://doi.org/10.1063/1.3624927	journal	August 2011
Atomistic calculations of Ga(NAsP)/GaP(N) quantum wells on silicon substrate: Band structure and optical gain Robert, C.; Perrin, M.; Cornet, C. Applied Physics Letters, Vol. 100, Issue 11 https://doi.org/10.1063/1.3694028	journal	March 2012
Contactless electroreflectance study of the Fermi level pinning on GaSb surface in n-type and p-type GaSb Van Hoof structures Kudrawiec, R.; Nair, H. P.; Latkowska, M. Journal of Applied Physics, Vol. 112, Issue 12 https://doi.org/10.1063/1.4770413	journal	December 2012
Preferential incorporation of substitutional nitrogen near the atomic step edges in diluted nitride alloys Cornet, C.; Nguyen Thanh, T.; Quinci, T. Applied Physics Letters, Vol. 101, Issue 25 https://doi.org/10.1063/1.4772785	journal	December 2012
GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy Yu, K. M.; Kudrawiec, R.; Luce, A. V. Applied Physics Letters, Vol. 102, Issue 11 https://doi.org/10.1063/1.4795782	journal	March 2013
Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells Almosni, S.; Robert, C.; Nguyen Thanh, T. Journal of Applied Physics, Vol. 113, Issue 12 https://doi.org/10.1063/1.4798363	journal	March 2013
Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy Kudrawiec, R.; Janicki, L.; Gladysiewicz, M. Applied Physics Letters, Vol. 103, Issue 5 https://doi.org/10.1063/1.4817296	journal	July 2013
Temperature evolution of carrier dynamics in GaN _x P _y As _1−y−x alloys Baranowski, M.; Kudrawiec, R.; Luce, A. V. Journal of Applied Physics, Vol. 117, Issue 17 https://doi.org/10.1063/1.4919751	journal	May 2015
Trends in the electronic structure of dilute nitride alloys O'Reilly, E. P.; Lindsay, A.; Klar, P. J. Semiconductor Science and Technology, Vol. 24, Issue 3 https://doi.org/10.1088/0268-1242/24/3/033001	journal	February 2009
Band anticrossing in ZnOSe highly mismatched alloy Welna, Monika; Kudrawiec, Robert; Nabetani, Yu Applied Physics Express, Vol. 7, Issue 7 https://doi.org/10.7567/apex.7.071202	journal	July 2014
Photoluminescence and photoluminescence-excitation spectroscopy of GaPAsN/GaP lattice-matched multiple quantum well structures Biwa, Goshi; Yaguchi, Hiroyuki; Onabe, Kentaro Journal of Crystal Growth, Vol. 195, Issue 1-4 https://doi.org/10.1016/S0022-0248(98)00734-9	journal	December 1998
On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%–32% Kudrawiec, R.; Yuen, H. B.; Bank, S. R. Journal of Applied Physics, Vol. 104, Issue 3 https://doi.org/10.1063/1.2961330	journal	August 2008
Intermediate band solar cells: Recent progress and future directions Okada, Y.; Ekins-Daukes, N. J.; Kita, T. Applied Physics Reviews, Vol. 2, Issue 2 https://doi.org/10.1063/1.4916561	journal	June 2015
Electronic Band Structure of GaN x P y As 1 − x − y Highly Mismatched Alloys: Suitability for Intermediate-Band Solar Cells Kudrawiec, R.; Luce, A. V.; Gladysiewicz, M. Physical Review Applied, Vol. 1, Issue 3 https://doi.org/10.1103/PhysRevApplied.1.034007	journal	April 2014
Two-Photon Absorption in GaAs 1 − x − y P y N x Intermediate-Band Solar Cells Jussila, H.; Kivisaari, P.; Lemettinen, J. Physical Review Applied, Vol. 3, Issue 5 https://doi.org/10.1103/PhysRevApplied.3.054007	journal	May 2015
Theory of electronic structure evolution in GaAsN and GaPN alloys Kent, P. R. C.; Zunger, Alex Physical Review B, Vol. 64, Issue 11 https://doi.org/10.1103/PhysRevB.64.115208	journal	August 2001
Band anticrossing in GaP 1 − x N x alloys Wu, J.; Walukiewicz, W.; Yu, K. M. Physical Review B, Vol. 65, Issue 24 https://doi.org/10.1103/PhysRevB.65.241303	journal	May 2002
Analysis of band anticrossing in Ga N x P 1 − x alloys Buyanova, I. A.; Izadifard, M.; Kasic, A. Physical Review B, Vol. 70, Issue 8 https://doi.org/10.1103/PhysRevB.70.085209	journal	August 2004
Experimental and theoretical investigation of the conduction band edge of Ga N x P 1 − x Güngerich, M.; Klar, P. J.; Heimbrodt, W. Physical Review B, Vol. 74, Issue 24 https://doi.org/10.1103/PhysRevB.74.241202	journal	December 2006
Photoreflectance, photoluminescence, and microphotoluminescence study of optical transitions between delocalized and localized states in GaN 0.02 As 0.98 , Ga 0.95 In 0.05 N 0.02 As 0.98 , and GaN 0.02 As 0.90 Sb 0.08 layers Kudrawiec, R.; Latkowska, M.; Baranowski, M. Physical Review B, Vol. 88, Issue 12 https://doi.org/10.1103/PhysRevB.88.125201	journal	September 2013
Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels Luque, Antonio; Martí, Antonio Physical Review Letters, Vol. 78, Issue 26 https://doi.org/10.1103/PhysRevLett.78.5014	journal	June 1997
Band Anticrossing in GaInNAs Alloys Shan, W.; Walukiewicz, W.; Ager, J. W. Physical Review Letters, Vol. 82, Issue 6 https://doi.org/10.1103/PhysRevLett.82.1221	journal	February 1999
Review of Experimental Results Related to the Operation of Intermediate Band Solar Cells Ramiro, Inigo; Marti, Antonio; Antolin, Elisa IEEE Journal of Photovoltaics, Vol. 4, Issue 2 https://doi.org/10.1109/JPHOTOV.2014.2299402	journal	March 2014
Limitations and Possibilities for Improvement of Photovoltaic Solar Energy Converters: Part I: Considerations for Earth's Surface Operation Wolf, M. Proceedings of the IRE, Vol. 48, Issue 7, p. 1246-1263 https://doi.org/10.1109/JRPROC.1960.287647	journal	July 1960
Ultra-wide electroluminescence spectrum of LED heterostructures based on GaPAsN semiconductor alloys Babichev, A. V.; Lazarenko, A. A.; Nikitina, E. V. Semiconductors, Vol. 48, Issue 4 https://doi.org/10.1134/S106378261404006X	journal	April 2014
Growth of a lattice-matched GaAsPN p–i–n junction on a Si substrate for monolithic III–V/Si tandem solar cells Yamane, Keisuke; Goto, Masaya; Takahashi, Kenjiro Applied Physics Express, Vol. 10, Issue 7 https://doi.org/10.7567/APEX.10.075504	journal	June 2017
Band anticrossing in ZnOSe highly mismatched alloy Welna, Monika; Kudrawiec, Robert; Nabetani, Yu Applied Physics Express, Vol. 7, Issue 7 https://doi.org/10.7567/APEX.7.071202	journal	July 2014

Cited By (3)

Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, and localization of states Polak, M. P.; Kudrawiec, R.; Rubel, O. Journal of Applied Physics, Vol. 126, Issue 17 https://doi.org/10.1063/1.5097977	journal	November 2019
A study of the strain distribution by scanning X-ray diffraction on GaP/Si for III–V monolithic integration on silicon Zhou, Ang; Ping Wang, Yan; Cornet, Charles Journal of Applied Crystallography, Vol. 52, Issue 4 https://doi.org/10.1107/s1600576719008537	journal	July 2019
Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, localization of states Polak, Maciej P.; Kudrawiec, Robert; Rubel, Oleg arXiv https://doi.org/10.48550/arxiv.1904.00159	text	January 2019

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