Multicolor emission from intermediate band semiconductor ZnO1-xSex

Welna, M.; Baranowski, M.; Linhart, W. M.; Kudrawiec, R.; Yu, K. M.; Mayer, M.; Walukiewicz, W.

doi:10.1038/srep44214

Multicolor emission from intermediate band semiconductor ZnO_1-xSe_x

Journal Article · Mon Mar 13 00:00:00 UTC 2017 · Scientific Reports

DOI:https://doi.org/10.1038/srep44214· OSTI ID:1408425

Welna, M. ^[1]; Baranowski, M. ^[2]; Linhart, W. M. ^[1]; Kudrawiec, R. ^[1]; Yu, K. M. ^[3]; Mayer, M. ^[4]; Walukiewicz, W. ^[4]

Wroclaw Univ. of Science and Technology (Poland). Dept. of Experimental Physics. Faculty of Fundamental Problems of Technology
Wroclaw Univ. of Science and Technology (Poland). Dept. of Experimental Physics. Faculty of Fundamental Problems of Technology; National Lab. for Intense Magnetic Fields (LNCMI), Grenoble and Toulouse (France)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; City Univ. of Hong Kong (China). Dept. of Physics and Materials Science
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division

Photoluminescence and photomodulated reflectivity measurements of ZnOSe alloys are used to demonstrate a splitting of the valence band due to the band anticrossing interaction between localized Se states and the extended valence band states of the host ZnO matrix. A strong multiband emission associated with optical transitions from the conduction band to lower E_- and upper E₊ valence subbands has been observed at room temperature. The composition dependence of the optical transition energies is well explained by the electronic band structure calculated using the kp method combined with the band anticrossing model. The observation of the multiband emission is possible because of relatively long recombination lifetimes. Longer than 1 ns lifetimes for holes photoexcited to the lower valence subband offer a potential of using the alloy as an intermediate band semiconductor for solar power conversion applications.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: National Science Centre (Poland); Research Grants Council of Hong Kong SAR (China); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1408425

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Vol. 7; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited By (3)

Study of delocalized and localized states in ZnSeO layers with photoluminescence, micro-photoluminescence, and time-resolved photoluminescence Wełna, M.; Baranowski, M.; Kudrawiec, R. Journal of Applied Physics, Vol. 125, Issue 20 https://doi.org/10.1063/1.5093548	journal	May 2019
Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, and localization of states Polak, M. P.; Kudrawiec, R.; Rubel, O. Journal of Applied Physics, Vol. 126, Issue 17 https://doi.org/10.1063/1.5097977	journal	November 2019
Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, localization of states Polak, Maciej P.; Kudrawiec, Robert; Rubel, Oleg arXiv https://doi.org/10.48550/arxiv.1904.00159	text	January 2019

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