Effect of oxygen on the electronic band structure in ZnO{sub x}Se{sub 1-x} alloys
- LBNL Library
The effect of alloying small amounts of ZnO with ZnSe on the electronic band structure has been studied. Optical transitions in molecular-beam-epitaxy-grown ZnO{sub x}Se{sub 1-x} epitaxial films (0 {<=} x {<=} 1.35%) were investigated using photoreflectance and photoluminescence spectroscopies. The fundamental band-gap energy of the alloys was found to decrease at a rate of about 0.1 eV per atomic percent of oxygen. The pressure dependence of the band gap was also found to be strongly affected by O incorporation. Both the effects can be quantitatively explained by an anticrossing interaction between the extended states of the conduction band of ZnSe and the highly localized oxygen states located at approximately 0.22 eV above the conduction-band edge.
- Research Organization:
- Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
- Sponsoring Organization:
- USDOE Director, Office of Science. Basic Energy Sciences (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 815360
- Report Number(s):
- LBNL--52356
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 83; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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