Band anticrossing in dilute nitrides

Journal Article · Tue Dec 23 04:00:00 EST 2003 · Journal of Physics: Condensed Matter

OSTI ID:834635

Shan, W ^[1]; Yu, K M; Walukiewicz, W; Wu, J; Ager, III, J W; Haller, E E

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1. LBNL Library

Alloying III-V compounds with small amounts of nitrogen leads to dramatic reduction of the fundamental band-gap energy in the resulting dilute nitride alloys. The effect originates from an anti-crossing interaction between the extended conduction-band states and localized N states. The interaction splits the conduction band into two nonparabolic subbands. The downward shift of the lower conduction subband edge is responsible for the N-induced reduction of the fundamental band-gap energy. The changes in the conduction band structure result in significant increase in electron effective mass and decrease in the electron mobility, and lead to a large enhance of the maximum doping level in GaInNAs doped with group VI donors. In addition, a striking asymmetry in the electrical activation of group IV and group VI donors can be attributed to mutual passivation process through formation of the nearest neighbor group-IV donor nitrogen pairs.

• Research Organization: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
• Sponsoring Organization: USDOE Director. Office of Science. Office of Basic Energy Sciences (US)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 834635
• Report Number(s): LBNL--54550
• Journal Information: Journal of Physics: Condensed Matter, Journal Name: Journal of Physics: Condensed Matter Journal Issue: 31 SI Vol. 16
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOYS
ASYMMETRY
EFFECTIVE MASS
ELECTRON MOBILITY
ELECTRONS
NITRIDES
NITROGEN
PASSIVATION