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New diode wavelengths for pumping solid-state lasers

Conference ·
OSTI ID:90213

High-power laser-diode arrays have been demonstrated to be viable pump sources for solid-state lasers. The diode bars (fill factor of 0.7) were bonded to silicon microchannel heatsinks for high-average-power operation. Over 12 W of CW output power was achieved from a one cm AlGaInP tensile-strained single-quantum-well laser diode bar. At 690 nm, a compressively-strained single-quantum-well laser-diode array produced 360 W/cm{sup 2} per emitting aperture under CW operation, and 2.85 kW of pulsed power from a 3.8 cm{sup 2} emitting-aperture array. InGaAs strained single-quantum-well laser diodes emitting at 900 nm produced 2.8 kW pulsed power from a 4.4 cm{sup 2} emitting-aperture array.

Research Organization:
Lawrence Livermore National Lab., CA (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
90213
Report Number(s):
UCRL-JC--118186; CONF-950226--55; ON: DE95014684
Country of Publication:
United States
Language:
English

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