High-power CW operation of AlGaInP laser-diode array at 640 nm

Journal Article · Tue Jan 31 23:00:00 EST 1995 · IEEE Photonics Technology Letters

DOI:https://doi.org/10.1109/68.345900· OSTI ID:46102

Skidmore, J A; Emanuel, M A; Beach, R J; Carlson, N W; Solarz, R W ^[1]; Bour, D P; Treat, D W ^[2]

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1. Lawrence Livermore National Lab., CA (United States)
2. Xerox Palo Alto Research Center, CA (United States)

Visible-emitting high-power laser bars are investigated at an emission wavelength of 640 nm. AlGaInP/GaInP, single tensile-strained quantum well, separate confinement heterostructures are fabricated into one cm long laser bars using a 0.7 fill factor. The low threshold current of the diode, combined with the aggressive heatsinking of a silicon microchannel cooler has resulted in more than 12 W of continuous wave output power.

• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 46102
• Journal Information: IEEE Photonics Technology Letters, Journal Name: IEEE Photonics Technology Letters Journal Issue: 2 Vol. 7; ISSN 1041-1135; ISSN IPTLEL
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM PHOSPHIDES
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM PHOSPHIDES
LASER MATERIALS
OPERATION
PERFORMANCE
SEMICONDUCTOR LASERS