High-power continuous wave 690 nm AlGaInP laser-diode arrays

Journal Article · Sun Mar 05 23:00:00 EST 1995 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.113844· OSTI ID:6560162

Skidmore, J A; Emanuel, M A; Beach, R J; Benett, W J; Freitas, B L; Carlson, N W; Solarz, R W ^[1]

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1. Lawrence Livermore National Laboratory, P. O. Box 808, L-495, Livermore, California 94550 (United States)

High-power diode laser arrays emitting at 690 nm have been developed for solid-state laser pumping. The laser diode bars (fill factor [approx]0.7) have been fabricated from single quantum well AlGaInP-based heterostructures. Using silicon microchannel heatsinks, a record high 360 W/cm[sup 2] per emitting aperture is achieved under continuous wave operation.

• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 6560162
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 66:10; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM COMPOUNDS
ALUMINIUM PHOSPHIDES
DESIGN
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS