High-power operation of InGaAsP-InP laser diode array at 1.73{micro}m

Journal Article · Wed Oct 01 00:00:00 EDT 1997 · IEEE Photonics Technology Letters

DOI:https://doi.org/10.1109/68.623254· OSTI ID:562053

Skidmore, J A; Freitas, B L; Reinhardt, C E; Utterback, E J; Page, R H; Emanuel, M A ^[1]

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1. Lawrence Livermore National Lab., CA (United States)

InGaAsP-InP laser bars with an emission wavelength of 1.73 {micro}m have been fabricated using compressively strained multiple-quantum-well (MQW) separate-confinement heterostructures (SCH). One-cm-wide, 0.7-fill-factor, diode bars are bonded onto Si microchannel heatsinks and stacked into a two-dimensional (2-D) laser array. 16 W of continuous-wave (CW) power was produced from a 1-cm bar and 200 W of peak power was generated from a 10-bar array with an emitting aperture of 1 cm{sup 2}.

• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 562053
• Journal Information: IEEE Photonics Technology Letters, Journal Name: IEEE Photonics Technology Letters Journal Issue: 10 Vol. 9; ISSN 1041-1135; ISSN IPTLEL
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
DIODE-PUMPED SOLID STATE LASERS
FABRICATION
HETEROJUNCTIONS
LASER MATERIALS
OPERATION
SEMICONDUCTOR LASERS