High-Power Reliable Operation of InGaAsP/InP Laser Bars at 1.73 {micro}m
Conference
·
OSTI ID:757413
- LLNL
InGaAsP/InP laser bars with an emission wavelength of 1.73 {micro}m have been fabricated using compressively-strained multiple-quantum-well separate-confinement heterostructures. One-cm-wide, 0.7-fill-factor, diode bars are bonded onto Si microchannel heatsinks. A maximum cw power of 16 W was produced from a one-cm bar. Derated to SW cw, the extrapolated lifetime is 10,000 hours of operation with a 20% degradation in output power. A 10-bar microlensed diode array with a one-square-cm aperture produced 200 W of peak power and was focused onto a Cr:ZnSe slab laser. Over 3 watts of pulsed power and xxmw of average power was generated at a wavelength of 2.5 {micro}m.
- Research Organization:
- Lawrence Livermore National Lab., CA (US)
- Sponsoring Organization:
- USDOE Office of Defense Programs (DP) (US)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 757413
- Report Number(s):
- UCRL-JC-133216; YN0100000; YN0100000
- Country of Publication:
- United States
- Language:
- English
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