Quantum coherence in semiconductor nanostructures for improved lasers and detectors.

Technical Report · Tue Jan 31 23:00:00 EST 2006

DOI:https://doi.org/10.2172/878573· OSTI ID:878573

Chow, Weng Wah Dr.; Lyo, Sungkwun Kenneth; Cederberg, Jeffrey George; Modine, Normand Arthur; Biefeld, Robert Malcolm

The potential for implementing quantum coherence in semiconductor self-assembled quantum dots has been investigated theoretically and experimentally. Theoretical modeling suggests that coherent dynamics should be possible in self-assembled quantum dots. Our experimental efforts have optimized InGaAs and InAs self-assembled quantum dots on GaAs for demonstrating coherent phenomena. Optical investigations have indicated the appropriate geometries for observing quantum coherence and the type of experiments for observing quantum coherence have been outlined. The optical investigation targeted electromagnetically induced transparency (EIT) in order to demonstrate an all optical delay line.

• Research Organization: Sandia National Laboratories
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 878573
• Report Number(s): SAND2006-0390
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
INDIUM ARSENIDES
NANOSTRUCTURES
QUANTUM DOTS
Quantum electronics.
Quantum optics.
SEMICONDUCTOR MATERIALS
Self-assembly.
Semiconductors.