Metamorphic quantum dots: Quite different nanostructures
- CNR-IMEM, Parco delle Scienze 37a, I-43100 Parma (Italy)
In this work, we present a study of InAs quantum dots deposited on InGaAs metamorphic buffers by molecular beam epitaxy. By comparing morphological, structural, and optical properties of such nanostructures with those of InAs/GaAs quantum dot ones, we were able to evidence characteristics that are typical of metamorphic InAs/InGaAs structures. The more relevant are: the cross-hatched InGaAs surface overgrown by dots, the change in critical coverages for island nucleation and ripening, the nucleation of new defects in the capping layers, and the redshift in the emission energy. The discussion on experimental results allowed us to conclude that metamorphic InAs/InGaAs quantum dots are rather different nanostructures, where attention must be put to some issues not present in InAs/GaAs structures, namely, buffer-related defects, surface morphology, different dislocation mobility, and stacking fault energies. On the other hand, we show that metamorphic quantum dot nanostructures can provide new possibilities of tailoring various properties, such as dot positioning and emission energy, that could be very useful for innovative dot-based devices.
- OSTI ID:
- 21476473
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 108; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
77 NANOSCIENCE AND NANOTECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
DISLOCATIONS
EMISSION
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INTERFACES
LAYERS
LINE DEFECTS
LUMINESCENCE
MATERIALS
MOBILITY
MOLECULAR BEAM EPITAXY
MORPHOLOGY
NANOSTRUCTURES
NUCLEATION
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
PHOTON EMISSION
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM DOTS
RED SHIFT
SEMICONDUCTOR MATERIALS
STACKING FAULTS
SURFACES