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Title: Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3584132· OSTI ID:21518409
; ;  [1]; ; ; ; ; ;  [2]
  1. CNR-IMEM Institute, Parco delle Scienze 37a, I-43100 Parma (Italy)
  2. UMDO - Unidad Asociada al IMM-CSIC, Instituto de Ciencia de los Materiales, Universidad de Valencia, P.O. Box 22085, 46071 Valencia (Spain)

We report on the growth by molecular beam epitaxy and the study by atomic force microscopy and photoluminescence of low density metamorphic InAs/InGaAs quantum dots. subcritical InAs coverages allow to obtain 10{sup 8} cm{sup -2} dot density and metamorphic In{sub x}Ga{sub 1-x}As (x=0.15,0.30) confining layers result in emission wavelengths at 1.3 {mu}m. We discuss optimal growth parameters and demonstrate single quantum dot emission up to 1350 nm at low temperatures, by distinguishing the main exciton complexes in these nanostructures. Reported results indicate that metamorphic quantum dots could be valuable candidates as single photon sources for long wavelength telecom windows.

OSTI ID:
21518409
Journal Information:
Applied Physics Letters, Vol. 98, Issue 17; Other Information: DOI: 10.1063/1.3584132; (c) 2011 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English