Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates

Journal Article · Mon Apr 25 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3584132· OSTI ID:21518409

Seravalli, L; Trevisi, G; Frigeri, P ^[1]; Rivas, D; Munoz-Matutano, G; Suarez, I; Alen, B; Canet, J; Martinez-Pastor, J P ^[2]

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1. CNR-IMEM Institute, Parco delle Scienze 37a, I-43100 Parma (Italy)
2. UMDO - Unidad Asociada al IMM-CSIC, Instituto de Ciencia de los Materiales, Universidad de Valencia, P.O. Box 22085, 46071 Valencia (Spain)

We report on the growth by molecular beam epitaxy and the study by atomic force microscopy and photoluminescence of low density metamorphic InAs/InGaAs quantum dots. subcritical InAs coverages allow to obtain 10{sup 8} cm{sup -2} dot density and metamorphic In{sub x}Ga{sub 1-x}As (x=0.15,0.30) confining layers result in emission wavelengths at 1.3 {mu}m. We discuss optimal growth parameters and demonstrate single quantum dot emission up to 1350 nm at low temperatures, by distinguishing the main exciton complexes in these nanostructures. Reported results indicate that metamorphic quantum dots could be valuable candidates as single photon sources for long wavelength telecom windows.

• OSTI ID: 21518409
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 98; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ALLOY SYSTEMS
ARSENIC COMPOUNDS
ARSENIDES
ATOMIC FORCE MICROSCOPY
BOSONS
CRYSTAL GROWTH METHODS
DENSITY
ELEMENTARY PARTICLES
EMISSION
EPITAXY
EXCITONS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GROWTH
INDIUM ARSENIDES
INDIUM COMPOUNDS
LAYERS
LUMINESCENCE
MASSLESS PARTICLES
MATERIALS
MICROSCOPY
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
PHOTOLUMINESCENCE
PHOTON EMISSION
PHOTONS
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM DOTS
QUASI PARTICLES
SEMICONDUCTOR MATERIALS
SUBSTRATES
TERNARY ALLOY SYSTEMS
WAVELENGTHS