1.59 {mu}m room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates

Journal Article · Mon May 26 04:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2937095· OSTI ID:21102041

Seravalli, L; Frigeri, P; Trevisi, G; Franchi, S ^[1]

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1. CNR-IMEM Institute, Parco delle Scienze 37a, I-43100 Parma (Italy)

We present design, preparation by molecular beam epitaxy, and characterization by photoluminescence of long-wavelength emitting, strain-engineered quantum dot nanostructures grown on GaAs, with InGaAs confining layers and additional InAlAs barriers embedding InAs dots. Quantum dot strain induced by metamorphic lower confining layers is instrumental to redshift the emission, while a-few-nanometer thick InAlAs barriers allow to significantly increase the activation energy of carriers' thermal escape. This approach results in room temperature emission at 1.59 {mu}m and, therefore, is a viable method to achieve efficient emission in the 1.55 {mu}m window and beyond from quantum dots grown on GaAs substrates.

• OSTI ID: 21102041
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 92; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
CRYSTAL GROWTH
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM DOTS
RED SHIFT
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K