Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots
- Lobachevsky State University of Nizhny Novgorod, Physicotechnical Research Institute (Russian Federation)
- Lobachevsky State University of Nizhny Novgorod (Russian Federation)
- Lobachevsky State University of Nizhny Novgorod, Research Institute for Chemistry (Russian Federation)
The capping of an array of self-assembled InAs/GaAs quantum dots by an InGaAs quantum-well layer leads to an increase in their size due to indium enrichment of the region near the top of the quantum dots, which decreases the energy of the ground-state optical transition in quantum dots by 50 meV and shifts the hole wave function toward the top of the quantum dot.
- OSTI ID:
- 22756265
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 11 Vol. 51; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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