Photoreflectance and photoluminescence study of InAs dots-in-a-well nanostructures

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848505· OSTI ID:22261914

Nedzinskas, Ramūnas; Čechavičius, Bronislovas; Kavaliauskas, Julius; Karpus, Vytautas; Valušis, Gintaras ^[1]; Li, Lianhe; Khanna, Suraj P.; Linfield, Edmund H. ^[2]

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1. Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius (Lithuania)
2. School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT (United Kingdom)

InAs quantum dots (QDs), embedded within InGaAs/GaAs/AlAs and GaAs/AlAs quantum wells (QWs), are examined by photoreflectance and photoluminescence techniques. Optical properties and electronic structure of two differently designed dots-in-a-well nanostructures is revealed focusing on the effect of strain-reducing InGaAs layer, which is discussed in detail. It is found that the use of InGaAs capping layer red-shifts the QD ground-state interband transition energy by about 100 meV maintaining strong quantization of the electronic states. The changes in InAs QD electronic properties are ascribed mainly to QD size/shape variation due to decomposition of InGaAs layer during growth process.

• OSTI ID: 22261914
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
DECOMPOSITION
ELECTRONIC STRUCTURE
GALLIUM ARSENIDES
GROUND STATES
INDIUM ARSENIDES
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
QUANTUM DOTS
QUANTUM WELLS