Interdiffusion and structural change in an InGaAs dots-in-a-well structure by rapid thermal annealing
- Nano Device Research Center, Korea Institute of Science and Technology P.O. Box 131, Cheongryang, Seoul 130-650 (Korea, Republic of)
Post-growth rapid thermal annealing (RTA) has been used to investigate an interdiffusion and the structural change in an InGaAs dots-in-a-well (DWELL) structure grown by molecular beam epitaxy using an alternately supplying InAs and GaAs sources. In the case of the as-grown sample, which has a metastable quantum structure due to an intentional deficit of source materials, it is found that an InGaAs quantum well (QW) coexists with the premature quantum dots (QDs), and an intermediate layer exists between the QW and the QDs. Through the RTA process at 600 and 800 deg. C for 30 s, metastable structure changes into a normal DWELL structure composed of QDs and QW as a result of the intermixing of premature QDs and the intermediate layer.
- OSTI ID:
- 20658035
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 96; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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