Long-range ordered self-assembled InAs quantum dots epitaxially grown on (110) GaAs

Journal Article · Mon Nov 15 04:00:00 EST 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1819987· OSTI ID:20634445

Bauer, J; Schuh, D; Uccelli, E; Schulz, R; Kress, A; Hofbauer, F; Finley, J J; Abstreiter, G ^[1]

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1. Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, D-85748 Garching (Germany)

We report on a promising approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on previously grown and in situ cleaved substrates (cleaved-edge overgrowth), arrays of long-range ordered InAs quantum dots have been fabricated. Both atomic force microscopy and micro-photoluminescence measurements demonstrate the ability to control size, position, and ordering of the quantum dots. Furthermore, single dot photoluminescence investigations confirm the high optical quality of the quantum dots fabricated.

• OSTI ID: 20634445
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 85; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACCURACY
ATOMIC FORCE MICROSCOPY
CONTROL
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
POSITIONING
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SUBSTRATES