Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

Journal Article · Tue Nov 15 04:00:00 EST 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616110154· OSTI ID:22649667

Kosarev, A. N.; Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R. ^[1]

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1. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

The photoluminescence of InAs semiconductor quantum dots overgrown by GaAs in the low-temperature mode (LT-GaAs) using various spacer layers or without them is studied. Spacer layers are thin GaAs or AlAs layers grown at temperatures normal for molecular-beam epitaxy (MBE). Direct overgrowth leads to photoluminescence disappearance. When using a thin GaAs spacer layer, the photoluminescence from InAs quantum dots is partially recovered; however, its intensity appears lower by two orders of magnitude than in the reference sample in which the quantum-dot array is overgrown at normal temperature. The use of wider-gap AlAs as a spacer-layer material leads to the enhancement of photoluminescence from InAs quantum dots, but it is still more than ten times lower than that of reference-sample emission. A model taking into account carrier generation by light, diffusion and tunneling from quantum dots to the LT-GaAs layer is constructed.

• OSTI ID: 22649667
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 11 Vol. 50; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CHARGE CARRIERS
DIFFUSION
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SPACERS
TUNNEL EFFECT
VISIBLE RADIATION