Self-assembled InAs quantum dots and wires grown on a cleaved-edge GaAs(110) surface

Journal Article · Mon May 01 04:00:00 EDT 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2197027· OSTI ID:20795799

Blumin, M; Ruda, H E; Savelyev, I G; Shik, A; Wang, H ^[1]

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1. Centre for Advanced Nanotechnology, University of Toronto, 170 College Street, Toronto M53 3E4 (Canada)

We studied the conditions for the Stranski-Krastanov mode of molecular beam epitaxial growth of InAs on a cleaved GaAs(110) surface. Temperature distributions on a subholder with cleaved facets were revealed using thermophotography. Combining these data with a theoretical model enabled a determination of the real temperature on the cleaved-edge surfaces (110), which differed markedly from the temperature on a planar wafer (100). Based on these results, we proposed an approach that combines different growth conditions in one technological process. As a result, appropriate growth conditions were established for InAs quantum dots grown on the cleaved GaAs(110) surface. Control over the dot nucleation process was shown to permit growth of both linear arrays of quantum dots and planar quantum wires on these (110) surfaces.

• OSTI ID: 20795799
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 99; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
GALLIUM ARSENIDES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
NUCLEATION
QUANTUM DOTS
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SURFACES
TEMPERATURE DISTRIBUTION