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Process for ion-assisted laser deposition of biaxially textured layer on substrate

Patent ·
OSTI ID:87770

A process for depositing a biaxially aligned intermediate layer over a non-single crystal substrate is disclosed which permits the subsequent deposition thereon of a biaxially oriented superconducting film. The process comprises depositing on a substrate by laser ablation a material capable of being biaxially oriented and also capable of inhibiting the migration of substrate materials through the intermediate layer into such a superconducting film, while simultaneously bombarding the substrate with an ion beam. In a preferred embodiment, the deposition is carried out in the same chamber used to subsequently deposit a superconducting film over the intermediate layer. In a further aspect of the invention, the deposition of the superconducting layer over the biaxially oriented intermediate layer is also carried out by laser ablation with optional additional bombardment of the coated substrate with an ion beam during the deposition of the superconducting film. 8 figs.

Research Organization:
University of California
DOE Contract Number:
AC03-76SF00098
Assignee:
Univ. of California, Oakland, CA (United States)
Patent Number(s):
US 5,432,151/A/
Application Number:
PAN: 8-090,422
OSTI ID:
87770
Country of Publication:
United States
Language:
English