Deposition of biaxially textured yttria-stabilized zirconia by ion-beam-assisted deposition.
Biaxially textured yttria (8 mol %)-stabilized zirconia (YSZ) thin films were deposited on randomly oriented Hastelloy C and Stainless Steel 304 at room temperature as a buffer layer for subsequent deposition of oriented YBa{sub 2}Cu{sub 3}O{sub x} films. The 0.16-1.3 {micro}m thick YSZ films were deposited by e-beam evaporation at rates of 1.2-3.2 {angstrom}/sec. Biaxially textured films were produced with an Ar/O{sub 2} ion beam directed at the substrate during film growth. X-ray diffraction was used to study in-plane and out-of-plane orientation as a function of ion-bombardment angle, film thickness, ion-to-atom flux ratio, and substrate material. In-plane and out-of-plane average-misorientation angles on these YSZ films that were deposited by ion-beam-assisted deposition were as low as 17 and 5.4{degree}, respectively, on as-received substrates.
- Research Organization:
- Argonne National Lab., IL (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 10705
- Report Number(s):
- ANL/ET/CP-95981
- Country of Publication:
- United States
- Language:
- English
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