Formation of thin-film resistors on silicon substrates

Patent · Mon Oct 31 23:00:00 EST 1988

OSTI ID:875220

Schnable, George L. ^[1]; Wu, Chung P. ^[2]

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1. Montgomery County, PA
2. Hamilton Township, Mercer County, NJ

The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

• Research Organization: United States Air Force (USAF), Washington, DC (United States)
• Sponsoring Organization: USDOE
• Assignee: United States of America as represented by Secretary of Air (Washington, DC)
• Patent Number(s): H000546
• Application Number: 02/716,089
• OSTI ID: 875220
• Country of Publication: United States
• Language: English

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