Stable thin film resistors using double layer structure
- Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
- Department of Electrical and Computer Engineering, State University of New York at Buffalo, Buffalo, New York 14260 (United States)
- Ohmtek, Inc., 2160 Liberty Drive, Niagara Falls, New York 14304 (United States)
Highly stable bilayer thin film resistors, which consist of an underlying layer of tantalum nitride and of a capping layer of ruthenium oxide, were developed by taking advantage of the desired characteristics of two different materials in a single system. The resistors fabricated in such a way were highly stable under power loading or thermal cycling. Resistors with one digit temperature coefficient of resistance could be easily controlled by the layer thickness ratio of the tantalum nitride to the ruthenium oxide and the {ital ex} {ital situ} annealing temperature or duration. Auger electron spectroscopy depth profile on the thin films indicates that the ruthenium oxide layer is well defined for the as-deposited form. Nevertheless, interdiffusion takes place after thermal treatment of the bilayer which is used to tune the temperature coefficient of resistance and to stabilize the resistance of the resistors.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 54911
- Journal Information:
- Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 6 Vol. 10; ISSN JMREEE; ISSN 0884-2914
- Country of Publication:
- United States
- Language:
- English
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