Formation of thin-film resistors on silicon substrates
Patent
·
OSTI ID:1176587
The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.
- Research Organization:
- The United States of America as represented by the Secretary of the Air Force, Washington, DC (United States)
- Sponsoring Organization:
- USDOE
- Assignee:
- The United States of America as represented by the Secretary of the Air Force (Washington, DC)
- Patent Number(s):
- H000546
- Application Number:
- 02/716,089
- OSTI ID:
- 1176587
- Country of Publication:
- United States
- Language:
- English
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