Scanning evanescent electro-magnetic microscope

Xiang, Xiao-Dong; Gao, Chen; Schultz, Peter G; Wei, Tao

Scanning evanescent electro-magnetic microscope

Patent · Wed Jan 01 04:00:00 EST 2003

OSTI ID:875106

Xiang, Xiao-Dong ^[1]; Gao, Chen ^[2]; Schultz, Peter G ^[3]; Wei, Tao ^[4]

Alameda, CA
Anhui, CN
La Jolla, CA
Sunnyvale, CA

A novel scanning microscope is described that uses near-field evanescent electromagnetic waves to probe sample properties. The novel microscope is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The inventive scanning evanescent wave electromagnetic microscope (SEMM) can map dielectric constant, tangent loss, conductivity, complex electrical impedance, and other electrical parameters of materials. The quantitative map corresponds to the imaged detail. The novel microscope can be used to measure electrical properties of both dielectric and electrically conducting materials.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA

DOE Contract Number:: AC03-76SF00098

Assignee:: The Regents of the University of California (Oakland, CA)

Patent Number(s):: US 6532806

OSTI ID:: 875106

Country of Publication:: United States

Language:: English

References (16)

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Scanning evanescent electro-magnetic microscope

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