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Scanning evanescent electro-magnetic microscope

Patent ·
OSTI ID:873489
 [1];  [1]
  1. Alameda, CA
+ Show Author Affiliations
A novel scanning microscope is described that uses near-field evanescent electromagnetic waves to probe sample properties. The novel microscope is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The inventive scanning evanescent wave electromagnetic microscope (SEMM) can map dielectric constant, tangent loss, conductivity, complex electrical impedance, and other electrical parameters of materials. The quantitative map corresponds to the imaged detail. The novel microscope can be used to measure electrical properties of both dielectric and electrically conducting materials.
Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
DOE Contract Number:
AC03-76SF00098
Assignee:
Regents of University of California (Oakland, CA)
Patent Number(s):
US 6173604
OSTI ID:
873489
Country of Publication:
United States
Language:
English

References (3)

Nondestructive Imaging of Dielectric-Constant Profiles and Ferroelectric Domains with a Scanning-Tip Microwave Near-Field Microscope journal June 1997
Non-destructive characterization of materials by evanescent microwaves journal May 1993
Scanning tip microwave near‐field microscope journal June 1996

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