Scanning evanescent electro-magnetic microscope

Patent · Mon Jan 01 00:00:00 EST 2001

OSTI ID:873489

Xiang, Xiao-Dong ^[1]; Gao, Chen ^[1]

---

1. Alameda, CA

A novel scanning microscope is described that uses near-field evanescent electromagnetic waves to probe sample properties. The novel microscope is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The inventive scanning evanescent wave electromagnetic microscope (SEMM) can map dielectric constant, tangent loss, conductivity, complex electrical impedance, and other electrical parameters of materials. The quantitative map corresponds to the imaged detail. The novel microscope can be used to measure electrical properties of both dielectric and electrically conducting materials.

• Research Organization: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
• DOE Contract Number: AC03-76SF00098
• Assignee: Regents of University of California (Oakland, CA)
• Patent Number(s): US 6173604
• OSTI ID: 873489
• Country of Publication: United States
• Language: English

Related Subjects

scanning
evanescent
electro-magnetic
microscope
novel
described
near-field
electromagnetic
waves
probe
sample
properties
capable
resolution
imaging
quantitative
measurements
electrical
inventive
wave
semm
map
dielectric
constant
tangent
loss
conductivity
complex
impedance
parameters
materials
corresponds
imaged
detail
measure
electrically
conducting
magnetic wave
conducting material
dielectric constant
electrically conducting
electromagnetic waves
electrical properties
electromagnetic wave
resolution imaging
quantitative measurements
electrical parameter
evanescent wave
quantitative measure
electrical parameters
electrical impedance
evanescent electromagnetic
quantitative measurement
probe sample
/73/250/