Composition and method for removing photoresist materials from electronic components

Patent · Tue Jan 01 04:00:00 EST 2002

OSTI ID:874508

Davenhall, Leisa B ^[1]; Rubin, James B ^[2]

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1. Santa Fe, NM
2. Los Alamos, NM

The invention is a combination of at least one dense phase fluid and at least one dense phase fluid modifier which can be used to contact substrates for electronic parts such as semiconductor wafers or chips to remove photoresist materials which are applied to the substrates during manufacture of the electronic parts. The dense phase fluid modifier is one selected from the group of cyclic, aliphatic or alicyclic compounds having the functional group: ##STR1## wherein Y is a carbon, oxygen, nitrogen, phosphorus or sulfur atom or a hydrocarbon group having from 1 to 10 carbon atoms, a halogen or halogenated hydrocarbon group having from 1 to 10 carbon atoms, silicon or a fluorinated silicon group; and wherein R.sub.1 and R.sub.2 can be the same or different substituents; and wherein, as in the case where X is nitrogen, R.sub.1 or R.sub.2 may not be present. The invention compositions generally are applied to the substrates in a pulsed fashion in order to remove the hard baked photoresist material remaining on the surface of the substrate after removal of soft baked photoresist material and etching of the barrier layer.

• Research Organization: Los Alamos National Laboratory (LANL), Los Alamos, NM
• DOE Contract Number: W-7405-ENG-36
• Assignee: The Regents of the University of California (Los Alamos, NM)
• Patent Number(s): US 6403544
• OSTI ID: 874508
• Country of Publication: United States
• Language: English

Related Subjects

/510/8/134/430/438/
10
alicyclic
aliphatic
applied
atom
atoms
baked
barrier
carbon
chips
combination
components
composition
compositions
compounds
contact
cyclic
dense
electronic
electronic components
etching
fashion
fluid
fluorinated
functional
halogen
halogenated
hard
hydrocarbon
layer
manufacture
material
materials
method
modifier
nitrogen
oxygen
phase
phase fluid
phosphorus
photoresist
photoresist material
pulsed
remaining
removal
remove
removing
resist material
rsub1
rsub2
selected
semiconductor
silicon
soft
str1
substituents
substrate
substrates
sulfur
surface
wafers