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Process for forming epitaxial perovskite thin film layers using halide precursors

Patent ·
OSTI ID:873727
 [1];  [1];  [2];  [1]
  1. Albuquerque, NM
  2. Corrales, NM
+ Show Author Affiliations
A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.
Research Organization:
SANDIA CORP
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
US 6231666
OSTI ID:
873727
Country of Publication:
United States
Language:
English

References (4)

Epitaxial nucleation and growth of chemically derived Ba 2 YCu 3 O 7− x thin films on (001) SrTiO 3 journal May 1995
Effect of growth conditions on the properties and morphology of chemically derived epitaxial thin films of Ba 2 YCu 3 O 7− x on (001) LaAlO 3 journal February 1992
Metalorganic deposition of high‐ J c Ba 2 YCu 3 O 7− x thin films from trifluoroacetate precursors onto (100) SrTiO 3 journal October 1990
Heteroepitaxial growth of chemically derived ex situ Ba 2 YCu 3 O 7− x thin films journal September 1994

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7-x
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acetates
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atmosphere
buffer
buffer layer
cu
degree
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dip
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epitaxial
epitaxial film
film
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film layers
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halide
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