Process for forming epitaxial perovskite thin film layers using halide precursors

Title: Process for forming epitaxial perovskite thin film layers using halide precursors

Full Record
Other Related Research

Abstract

A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

Inventors:

Clem, Paul G ^[1]; Rodriguez, Mark A ^[1]; Voigt, James A ^[2]; Ashley, Carol S ^[1]

Albuquerque, NM
Corrales, NM

Publication Date:: 2001-01-01

Research Org.:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

OSTI Identifier:: 873727

Patent Number(s):: US 6231666

Assignee:: Sandia Corporation (Albuquerque, NM)

DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: process; forming; epitaxial; perovskite; film; layers; halide; precursors; perovskite-phase; substrate; buffer; layer; yba; cu; 7-x; superconductor; utilizes; alkali; alkaline; metal; acetates; dissolved; halogenated; organic; acid; titanium; isopropoxide; dip; spin-coat; heated; 700; degree; inert; gas; atmosphere; form; ybco; deposited; formed; film layers; layer formed; process utilizes; buffer layer; inert gas; gas atmosphere; film layer; organic acid; halogenated organic; epitaxial film; utilizes alkali; ybco superconductor; forming epitaxial; metal acetate; superconductor layer; /117/

Citation Formats


                    Clem, Paul G, Rodriguez, Mark A, Voigt, James A, and Ashley, Carol S. Process for forming epitaxial perovskite thin film layers using halide precursors.  United States: N. p., 2001. 
        Web.

Copy to clipboard


                    Clem, Paul G, Rodriguez, Mark A, Voigt, James A, & Ashley, Carol S. Process for forming epitaxial perovskite thin film layers using halide precursors.  United States.

Copy to clipboard


                    Clem, Paul G, Rodriguez, Mark A, Voigt, James A, and Ashley, Carol S. Mon .  
        "Process for forming epitaxial perovskite thin film layers using halide precursors".  United States.  https://www.osti.gov/servlets/purl/873727.

Copy to clipboard


                    
@article{osti_873727,

  title        = {Process for forming epitaxial perovskite thin film layers using halide precursors},

  author       = {Clem, Paul G and Rodriguez, Mark A and Voigt, James A and Ashley, Carol S},

  abstractNote = {A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/873727},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2001},

  month        = {1}

}

Copy to clipboard

Patent:

View Patent

Save / Share:

Export Metadata

Save to My Library

Similar records in OSTI.GOV collections:

Method for making high-critical-current-density YBa.sub.2 Cu.sub.3 O.sub.7 superconducting layers on metallic substrates

Patent Feenstra, Roeland ; Christen, David ; Paranthaman, Mariappan

A method is disclosed for fabricating YBa.sub.2 Cu.sub.3 O.sub.7 superconductor layers with the capability of carrying large superconducting currents on a metallic tape (substrate) supplied with a biaxially textured oxide buffer layer. The method represents a simplification of previously established techniques and provides processing requirements compatible with scale-up to long wire (tape) lengths and high processing speeds. This simplification has been realized by employing the BaF.sub.2 method to grow a YBa.sub.2 Cu.sub.3 O.sub.7 film on a metallic substrate having a biaxially textured oxide buffer layer.
Full Text Available
Superconducting microcircuitry by the microlithgraphic patterning of superconducting compounds and related materials

Patent Coppa, Nicholas V

Superconducting microcircuits including a thin layer of Ba.sub.2 Cu.sub.3 O.sub.5+x (0
Full Text Available
Microstructure and Mechanics of Superconductor Epitaxy via the Chemical Solution Deposition Method

Other Lange, Frederick F

Executive Summary: Initially the funds were sufficient funds were awarded to support one graduate student and one post-doc. Lange, though other funds, also supported a graduate intern from ETH Zurich, Switzerland for a period of 6 months. The initial direction was to study the chemical solution deposition method to understand the microstructural and mechanical phenomena that currently limit the production of thick film, reliable superconductor wires. The study was focused on producing thicker buffer layer(s) on Ni-alloy substrates produced by the RABiTS method. It focused on the development of the microstructure during epitaxy, and the mechanical phenomena that produce cracksmore »« less
Full Text Available
Effects of metal buffer layer on the epitaxial growth of YBa{sub 2}Cu{sub 3}O{sub 7{minus}y} superconducting films by dipping-pyrolysis process

Conference Manabe, T ; Yamaguchi, I ; Nakamura, S ; ...

Superconducting YBa{sub 2}Cu{sub 3}O{sub 7{minus}y} (YBCO) films were prepared by dipping-pyrolysis process on SrTiO{sub 3} (001) or on MgO (001) substrates covered with a metal (Au or Ag) buffer layer, and the effects of these metal layers on the growth of YBCO films were investigated. Epitaxial growth of YBCO was found to be suppressed by the Au buffer layer, which crystallized to exhibit (111) orientation, after heat treatment at 700 C and higher. On the other hand, epitaxial YBCO films were obtained starting with Ag buffer layer by heat treatment at 700 C and higher, after which most of Agmore »« less
Formation of single-crystal CoSi{sub 2} buffer layers on Si (100) substrates by high dose Co ion implantation for the deposition of YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} thin films

Journal Article Li, Y ; Seidel, P ; Machalett, F ; ... - Journal of Materials Research

High quality single-crystal CoSi{sub 2} layers have been successfully formed on Si (100) using low energy high dose Co ion implantation followed by subsequent annealing method as a buffer layer for the deposition of YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} (YBCO) thin films. Rutherford backscattering spectrometry with channeling (RBS-C) measurements showed that CoSi{sub 2} layers after annealing at temperature between 850 and 950{degree}C had a minimum yield {chi}{sub min} of about 3{percent}. X-ray diffraction (XRD) spectra revealed that CoSi{sub 2} layers had the same orientation as the Si (100) substrates. Phi scan XRD spectra proved that CoSi{sub 2} layers epitaxially grew inmore »« less
https://doi.org/10.1557/JMR.1997.0278

Similar Records