Synthesis of YBa2CU3O7 using sub-atmospheric processing
Patent
·
OSTI ID:1175049
The present invention is a method of forming thick films of crystalline YBa.sub.2 Cu.sub.3 O.sub.7 that includes forming a precursor film comprising barium fluoride (BaF.sub.2), yttrium (Y) and copper (Cu). The precursor film is heat-treated at a temperature above 500.degree. C. in the presence of oxygen, nitrogen and water vapor at sub-atmospheric pressure to form a crystalline structure. The crystalline structure is then annealed at about 500.degree. C. in the presence of oxygen to form the crystalline YBa.sub.2 Cu.sub.3 O.sub.7 film. The YBa.sub.2 Cu.sub.3 O.sub.7 film formed by this method has a resistivity of from about 100 to about 600 .mu.Ohm-cm at room temperature and a critical current density measured at 77 K in a magnetic field of 1 Tesla of about 1.0.times.10.sup.5 Ampere per square centimeter (0.1 MA/cm.sup.2) or greater.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-98CH10886;
- Assignee:
- Brookhaven Science Associates (Upton, NY)
- Patent Number(s):
- 6,794,339
- Application Number:
- 09/950,888
- OSTI ID:
- 1175049
- Country of Publication:
- United States
- Language:
- English
Ex-situ post-deposition processing for large area Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7/ films and coated tapes
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journal | March 2001 |
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