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Title: TI--CR--AL--O thin film resistors

Abstract

Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

Inventors:
 [1];  [2]
  1. (Livermore, CA)
  2. (Solana Beach, CA)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
873417
Patent Number(s):
US 6154119
Assignee:
Regents of University of California (Oakland, CA) LLNL
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
ti-cr-al-o; film; resistors; films; resistor; material; rf; sputter; deposited; ceramic; targets; reactive; gas; mixture; resistivity; values; 10; ohm-cm; measured; thick; discretely; selected; control; target; composition; deposition; parameters; application; found; thermodynamically; stable; unlike; metal-oxide; vertical; lateral; example; layer; beneath; field; emission; cathode; flat; panel; display; surface; emissivity; coating; insulating; wall; supports; displays; thermodynamically stable; deposition parameters; resistivity values; rf sputter; control surface; surface emissivity; oxide films; insulating material; field emission; gas mixture; oxide film; flat panel; panel displays; panel display; wall supports; resistor material; emission cathode; vertical wall; film resistor; layer beneath; ceramic targets; sputter deposited; sputter deposit; film resistors; dynamically stable; /338/252/427/

Citation Formats

Jankowski, Alan F., and Schmid, Anthony P. TI--CR--AL--O thin film resistors. United States: N. p., 2000. Web.
Jankowski, Alan F., & Schmid, Anthony P. TI--CR--AL--O thin film resistors. United States.
Jankowski, Alan F., and Schmid, Anthony P. Sat . "TI--CR--AL--O thin film resistors". United States. doi:. https://www.osti.gov/servlets/purl/873417.
@article{osti_873417,
title = {TI--CR--AL--O thin film resistors},
author = {Jankowski, Alan F. and Schmid, Anthony P.},
abstractNote = {Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 2000},
month = {Sat Jan 01 00:00:00 EST 2000}
}

Patent:

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