Process for producing Ti-Cr-Al-O thin film resistors

Patent · Mon Jan 01 04:00:00 EST 2001

OSTI ID:873668

Jankowski, Alan F ^[1]; Schmid, Anthony P ^[2]

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1. Livermore, CA
2. Solana Beach, CA

Thin films of Ti-Cr-Al-O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti-Cr-Al-O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti-Cr-Al-O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti-Cr-Al-O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA
• DOE Contract Number: W-7405-ENG-48
• Assignee: Regents of University of California (Oakland, CA)
• Patent Number(s): US 6217722
• OSTI ID: 873668
• Country of Publication: United States
• Language: English

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deposition
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discretely
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dynamically stable
emission
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rf
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sputter deposit
sputter deposited
stable
supports
surface
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target
targets
thermodynamically
thermodynamically stable
thick
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