Flat panel display using Ti-Cr-Al-O thin film
Patent
·
OSTI ID:874591
- Livermore, CA
- Solan Beach, CA
Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Number(s):
- US 6420826
- OSTI ID:
- 874591
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
/313/338/
10sup10
10sup4
<1
application
beneath
cathode
ceramic
coating
composition
control
deposited
deposition
discretely
display
displays
emission
emissivity
example
field
field emission
film
films
flat
found
gas
gas mixture
insulating
lateral
layer
material
measured
metal-oxide
mixture
mum
ohm-cm
osub2
panel
panel display
parameters
reactive
resistivity
resistivity values
resistor
resistor material
rf
rf sputter
selected
sputter
sputter deposit
stable
supports
surface
target
targets
thermodynamically
thick
ti--cr--al--o
ti-cr-al-o
unlike
values
vertical
wall
10sup10
10sup4
<1
application
beneath
cathode
ceramic
coating
composition
control
deposited
deposition
discretely
display
displays
emission
emissivity
example
field
field emission
film
films
flat
found
gas
gas mixture
insulating
lateral
layer
material
measured
metal-oxide
mixture
mum
ohm-cm
osub2
panel
panel display
parameters
reactive
resistivity
resistivity values
resistor
resistor material
rf
rf sputter
selected
sputter
sputter deposit
stable
supports
surface
target
targets
thermodynamically
thick
ti--cr--al--o
ti-cr-al-o
unlike
values
vertical
wall