TI--CR--AL--O thin film resistors

Patent · Sat Jan 01 00:00:00 EST 2000

OSTI ID:873417

Jankowski, Alan F ^[1]; Schmid, Anthony P ^[2]

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1. Livermore, CA
2. Solana Beach, CA

Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
• DOE Contract Number: W-7405-ENG-48
• Assignee: Regents of University of California (Oakland, CA)
• Patent Number(s): US 6154119
• OSTI ID: 873417
• Country of Publication: United States
• Language: English

Related Subjects

ti-cr-al-o
film
resistors
films
resistor
material
rf
sputter
deposited
ceramic
targets
reactive
gas
mixture
resistivity
values
10
ohm-cm
measured
thick
discretely
selected
control
target
composition
deposition
parameters
application
found
thermodynamically
stable
unlike
metal-oxide
vertical
lateral
example
layer
beneath
field
emission
cathode
flat
panel
display
surface
emissivity
coating
insulating
wall
supports
displays
thermodynamically stable
deposition parameters
resistivity values
rf sputter
control surface
surface emissivity
oxide films
insulating material
field emission
gas mixture
oxide film
flat panel
panel displays
panel display
wall supports
resistor material
emission cathode
vertical wall
film resistor
layer beneath
ceramic targets
sputter deposited
sputter deposit
film resistors
dynamically stable
/338/252/427/