Phosphorous doping a semiconductor particle

Patent · Tue Jul 20 00:00:00 EDT 1999

OSTI ID:872399

Stevens, Gary Don ^[1]; Reynolds, Jeffrey Scott ^[2]

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1. 18912 Ravenglen Ct, Dallas, TX 75287
2. 703 Horizon, Murphy, TX 75094

A method (10) of phosphorus doping a semiconductor particle using ammonium phosphate. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried (16, 18), with the phosphorus then being diffused (20) into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement.

• Assignee: Stevens, Gary Don (18912 Ravenglen Ct, Dallas, TX 75287);Reynolds, Jeffrey Scott (703 Horizon, Murphy, TX 75094)
• Patent Number(s): US 5926727
• Application Number: 08/570,028
• OSTI ID: 872399
• Country of Publication: United States
• Language: English

Related Subjects

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10
16
18
20
ammonium
ammonium phosphate
anneal
chemical
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create
deep
diffused
diffusion
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diluted
diluted solution
disposal
doped silicon
doping
dried
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junction
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method
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phosphate
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phosphorus
pose
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predetermined concentration
procedure
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psg
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requirement
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segregation
semiconductor
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shallow
shipping
silicon
silicon sphere
solution
special
sphere
spheres
strip
strip metal
subsequent
surface
utilized