Boron doping a semiconductor particle
A method of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried, with the boron film then being driven into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out into piles and melted/fused with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements. 2 figs.
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- Assignee:
- PTO; PA: EDB-98:119966; SN: 98002024913; SCA: 360601
- Patent Number(s):
- US 5,763,320/A/
- Application Number:
- PAN: 8-570,070
- OSTI ID:
- 672613
- Country of Publication:
- United States
- Language:
- English
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