Phosphorus doping a semiconductor particle
A method of phosphorus doping a semiconductor particle using ammonium phosphate is disclosed. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried with the phosphorus then being diffused into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement. 1 fig.
- Sponsoring Organization:
- DOE; USDOE, Washington, DC (United States)
- Assignee:
- PTO; EDB-99-085320
- Patent Number(s):
- US 5926727; A
- Application Number:
- PPN: US 8-570028
- OSTI ID:
- 6433799
- Country of Publication:
- United States
- Language:
- English
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