Boron doping a semiconductor particle

Patent · Tue Jun 09 00:00:00 EDT 1998

OSTI ID:871611

Stevens, Gary Don ^[1]; Reynolds, Jeffrey Scott ^[2]; Brown, Louanne Kay ^[3]

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1. 18912 Ravenglen Ct., Dallas, TX 75287
2. 703 Horizon, Murphy, TX 75094
3. 2530 Poplar Tr., Garland, TX 75042

A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

• Assignee: Stevens, Gary Don (18912 Ravenglen Ct., Dallas, TX 75287);Reynolds, Jeffrey Scott (703 Horizon, Murphy, TX 75094);Brown, Louanne Kay (2530 Poplar Tr., Garland, TX 75042)
• Patent Number(s): US 5763320
• Application Number: 08/570,070
• OSTI ID: 871611
• Country of Publication: United States
• Language: English

Related Subjects

/438/
10
16
18
30
38
40
acid
boric
boric acid
boron
boron doping
chemical
concentration
desired
desired resistivity
diluted
diluted solution
disposal
doped
doped silicon
doping
dried
driven
film
furnace
fused
handling
inexpensive
melt
melted
metered
method
mixed
mixes
obtain
optical
optical furnace
p-type
particle
piles
pose
powder
predetermined
predetermined concentration
procedure
processes
requirements
resistivity
restricted
semiconductor
semiconductor particle
shipping
silicon
silicon powder
silicon sphere
silicon spheres
solution
special
sphere
spheres
throughout
uniformly
uniformly throughout