Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof

Chow, Weng W; Choquette, Kent D; Gourley, Paul L

Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof

Patent · Tue Jan 27 04:00:00 UTC 1998

OSTI ID:871350

Chow, Weng W ^[1]; Choquette, Kent D ^[2]; Gourley, Paul L ^[2]

Sandia Park, NM
Albuquerque, NM

A temperature-insensitive vertical-cavity surface-emitting laser (VCSEL) and method for fabrication thereof. The temperature-insensitive VCSEL comprises a quantum-well active region within a resonant cavity, the active region having a gain spectrum with a high-order subband (n.gtoreq.2) contribution thereto for broadening and flattening the gain spectrum, thereby substantially reducing any variation in operating characteristics of the VCSEL over a temperature range of interest. The method for forming the temperature-insensitive VCSEL comprises the steps of providing a substrate and forming a plurality of layers thereon for providing first and second distributed Bragg reflector (DBR) mirror stacks with an active region sandwiched therebetween, the active region including at least one quantum-well layer providing a gain spectrum having a high-order subband (n.gtoreq.2) gain contribution, and the DBR mirror stacks having predetermined layer compositions and thicknesses for providing a cavity resonance within a predetermined wavelength range substantially overlapping the gain spectrum.

Research Organization:: SANDIA CORP

DOE Contract Number:: AC04-94AL85000

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Number(s):: US 5712865

OSTI ID:: 871350

Country of Publication:: United States

Language:: English

References (9)

Many body effects in the temperature dependence of threshold in a vertical‐cavity surface‐emitting laser Chow, W. W.; Corzine, S. W.; Young, D. B. Applied Physics Letters, Vol. 66, Issue 19 https://doi.org/10.1063/1.113995	journal	May 1995
High‐efficiency, continuous‐wave, epitaxial surface‐emitting laser with pseudomorphic InGaAs quantum wells Gourley, P. L.; Lyo, S. K.; Dawson, L. R. Applied Physics Letters, Vol. 54, Issue 15 https://doi.org/10.1063/1.100678	journal	April 1989
Vertical‐cavity surface‐emitting lasers with thermally stable electrical characteristics Zhou, Ping; Lu, Bo; Cheng, Julian Journal of Applied Physics, Vol. 77, Issue 6 https://doi.org/10.1063/1.358813	journal	March 1995
Effects of quantum well subband structure on the temperature stability of vertical‐cavity semiconductor lasers Chow, Weng W.; Choquette, Kent D.; Gourley, Paul L. Applied Physics Letters, Vol. 66, Issue 24 https://doi.org/10.1063/1.113399	journal	June 1995
Physics of semiconductor microcavity lasers Koch, S. W.; Jahnke, F.; Chow, W. W. Semiconductor Science and Technology, Vol. 10, Issue 6 https://doi.org/10.1088/0268-1242/10/6/002	journal	June 1995
Temperature characteristics of a vertical-cavity surface-emitting laser with a broad-gain bandwidth Kajita, M.; Kawakami, T.; Nido, M. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 1, Issue 2 https://doi.org/10.1109/2944.401254	journal	June 1995
Lasing threshold in quantum well surface‐emitting lasers: Many‐body effects and temperature dependence Gourley, P. L.; Lyo, S. K.; Brennan, T. M. Applied Physics Letters, Vol. 55, Issue 26 https://doi.org/10.1063/1.101928	journal	December 1989
200/spl deg/C, 96-nm wavelength range, continuous-wave lasing from unbonded GaAs MOVPE-grown vertical cavity surface-emitting lasers Morgan, R. A.; Hibbs-Brenner, M. K.; Marta, T. M. IEEE Photonics Technology Letters, Vol. 7, Issue 5 https://doi.org/10.1109/68.384503	journal	May 1995
Semiconductor Laser Diodes Chow, Weng W.; Koch, Stephan W.; Sargent, Murray Semiconductor-Laser Physics https://doi.org/10.1007/978-3-642-61225-1_1	book	January 1994

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/372/
active
active region
bragg
bragg reflector
broadening
cavity
cavity resonance
cavity surface
characteristics
compositions
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dbr
distributed
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gtoreq
high-order
including
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layer composition
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predetermined wavelength
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reducing
reflector
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resonant cavity
sandwiched
sandwiched therebetween
spectrum
stacks
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subband
substantially
substantially overlap
substantially reducing
substrate
surface-emitting
surface-emitting laser
surface-emitting lasers
temperature
temperature range
temperature-insensitive
temperature-insensitive vertical-cavity
therebetween
thereon
thereto
thicknesses
variation
vcsel
vertical-cavity
vertical-cavity surface-emitting
wavelength
wavelength range

Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof

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References (9)

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