Numerical modeling of vertical cavity semiconductor lasers
A vertical cavity surface emitting laser (VCSEL) is a diode laser whose optical cavity is formed by growing or depositing DBR mirror stacks that sandwich an active gain region. The resulting short cavity supports lasing into a single longitudinal mode normal to the wafer, making these devices ideal for a multitude of applications, ranging from high-speed communication to high-power sources (from 2D arrays). This report describes the development of a numerical VCSEL model, whose goal is to both further their understanding of these complex devices and provide a tool for accurate design and data analysis.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 378906
- Report Number(s):
- SAND-96-2127; ON: DE96015338; TRN: AHC29620%%120
- Resource Relation:
- Other Information: PBD: Aug 1996
- Country of Publication:
- United States
- Language:
- English
Similar Records
Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof
Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof
Design and characterization of optically pumped vertical cavity surface emitting lasers. Master's thesis
Patent
·
Tue Jan 27 00:00:00 EST 1998
·
OSTI ID:378906
Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof
Patent
·
Tue Jan 27 00:00:00 EST 1998
·
OSTI ID:378906
Design and characterization of optically pumped vertical cavity surface emitting lasers. Master's thesis
Technical Report
·
Tue Dec 01 00:00:00 EST 1992
·
OSTI ID:378906