Recovery of Mo/Si multilayer coated optical substrates
Patent
·
OSTI ID:871277
- Pleasanton, CA
- Los Altos, CA
Mo/Si multilayers are removed from superpolished ZERODUR and fused silica substrates with a dry etching process that, under suitable processing conditions, produces negligible change in either the substrate surface figure or surface roughness. The two step dry etching process removes SiO.sub.2 overlayer with a fluroine-containing gas and then moves molybdenum and silicon multilayers with a chlorine-containing gas. Full recovery of the initial normal incidence extreme ultra-violet (EUV) reflectance response has been demonstrated on reprocessed substrates.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Number(s):
- US 5698113
- Application Number:
- 08/607055
- OSTI ID:
- 871277
- Country of Publication:
- United States
- Language:
- English
Soft X-ray projection imaging with multilayer reflection masks
|
journal | February 1995 |
Application of e-beam lithography and reactive ion etching to the fabrication of masks for projection x-ray lithography
|
journal | November 1991 |
Comparison of reflective mask technologies for soft x-ray projection lithography
|
conference | January 1992 |
Similar Records
Recovery of Mo/Si multilayer coated optical substrates
Recovery of EUVL substrates
Mo/Si and Mo/Be multilayer thin films on Zerodur substrates for extreme-ultraviolet lithography
Patent
·
Mon Dec 15 23:00:00 EST 1997
·
OSTI ID:563699
Recovery of EUVL substrates
Conference
·
Wed Jan 18 23:00:00 EST 1995
·
OSTI ID:192433
Mo/Si and Mo/Be multilayer thin films on Zerodur substrates for extreme-ultraviolet lithography
Journal Article
·
Fri Mar 31 23:00:00 EST 2000
· Applied Optics
·
OSTI ID:20216727
Related Subjects
/216/427/
change
chlorine-containing
chlorine-containing gas
coated
coated optical
conditions
containing gas
demonstrated
dry
dry etching
etching
etching process
euv
extreme
extreme ultra-violet
figure
fluroine-containing
fused
fused silica
gas
incidence
initial
molybdenum
moves
multilayer
multilayers
negligible
normal
normal incidence
optical
optical substrate
optical substrates
overlayer
process
process removes
processing
processing conditions
produces
recovery
reflectance
removed
removes
reprocessed
response
roughness
silica
silicon
sio
step
substrate
substrate surface
substrates
suitable
suitable processing
superpolished
surface
surface figure
surface roughness
ultra-violet
zerodur
change
chlorine-containing
chlorine-containing gas
coated
coated optical
conditions
containing gas
demonstrated
dry
dry etching
etching
etching process
euv
extreme
extreme ultra-violet
figure
fluroine-containing
fused
fused silica
gas
incidence
initial
molybdenum
moves
multilayer
multilayers
negligible
normal
normal incidence
optical
optical substrate
optical substrates
overlayer
process
process removes
processing
processing conditions
produces
recovery
reflectance
removed
removes
reprocessed
response
roughness
silica
silicon
sio
step
substrate
substrate surface
substrates
suitable
suitable processing
superpolished
surface
surface figure
surface roughness
ultra-violet
zerodur